- Product Introduction
Product Attributes
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays |
|
Manufacturer |
Texas Instruments |
|
Series |
NexFET™ |
|
Part Status |
Active |
|
Technology |
MOSFET (Metal Oxide) |
|
Configuration |
2 N-Channel (Dual) |
|
FET Feature |
- |
|
Drain to Source Voltage (Vdss) |
60V |
|
Current - Continuous Drain (Id) @ 25°C |
15A |
|
Rds On (Max) @ Id, Vgs |
28mOhm @ 5A, 10V |
|
Vgs(th) (Max) @ Id |
3.6V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
9.4nC @ 10V |
|
Input Capacitance (Ciss) (Max) @ Vds |
741pF @ 30V |
|
Power - Max |
2.1W |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
|
Supplier Device Package |
8-SOIC |
|
Base Product Number |
CSD88539 |
General description
FAQ
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Q: Q: 2. How can we guarantee quality?
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Accepted Payment Currency:USD,HKD,CNY;
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Language Spoken:English,Chinese
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