TK10P60W MOSFET N CH 600V 9.7A DPAK

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Toshiba Semiconductor and Storage

Series

DTMOSIV

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

3.7V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

700 pF @ 300 V

FET Feature

-

Power Dissipation (Max)

80W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Product Number

TK10P60