- Product Introduction
Product Attributes
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Infineon Technologies |
|
Series |
HEXFET® |
|
Part Status |
Active |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
55 V |
|
Current - Continuous Drain (Id) @ 25°C |
19A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
100mOhm @ 10A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
35 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
620 pF @ 25 V |
|
Power Dissipation (Max) |
68W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-220AB |
|
Package / Case |
TO-220-3 |
|
Base Product Number |
IRF9Z34 |
FAQ
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Q: Q: 2. How can we guarantee quality?
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Accepted Payment Currency:USD,HKD,CNY;
Accepted Payment Type: null;
Language Spoken:English,Chinese
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