
IPD26N06S2L35ATMA2 MOSFET N-CH 55V 30A TO252-31
N-Channel 55 V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11
- Product Introduction
Product Attributes
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Infineon Technologies |
|
Series |
OptiMOS™ |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
55 V |
|
Current - Continuous Drain (Id) @ 25°C |
30A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
35mOhm @ 13A, 10V |
|
Vgs(th) (Max) @ Id |
2V @ 26µA |
|
Gate Charge (Qg) (Max) @ Vgs |
24 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
621 pF @ 25 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
68W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
PG-TO252-3-11 |
|
Package / Case |
TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
Base Product Number |
IPD26N06 |
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Accepted Payment Currency:USD,HKD,CNY;
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Language Spoken:English,Chinese
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