Infineon And Semikron Igbt Modules Fgh60n60smd

Infineon And Semikron Igbt Modules Fgh60n60smd

The Infineon and Semikron IGBT module FGH60N60SMD is a reliable, high-performance power semiconductor device that combines the technical strengths of two leading manufacturers to provide an excellent solution for high voltage, high frequency applications. Its advantages in reliability, energy efficiency and applicability make it an ideal choice in a variety of power electronic designs.

  • Product Introduction
Product Description

 

Category

Discrete semiconductor products

transistor

IGBT

Single IGBT

Manufacturer

onsemi

Package

Pipe fittings

IGBT type

field cutoff

Voltage - collector-emitter breakdown (maximum)

600V

Current - Collector (Ic) (maximum)

120 A

Current - Collector Pulse (Icm)

180A

Vce(on) (maximum value) when Vge and Ic are different

2.5V @ 15V, 60A

Power - Max

600W

Switching energy

1.26mJ (on), 450µJ (off)

Input type

standard

Gate charge

189nC

Td (on/off) value at 25°C

18ns/104ns

Test Conditions

400V, 60A, 3 ohms, 15V

Reverse recovery time (trr)

39ns

Operating temperature

-55°C ~ 175°C(TJ)

Installation type

Through hole

Package/casing

TO-247-3

Supplier device packaging

TO-247-3

Basic product number

FGH60

 

This is a high-performance, reliable power semiconductor device designed to meet the requirements of high-voltage, high-frequency applications. The following are the main features of this product:

1. IGBT technology: Using Insulated Gate Bipolar Transistor (IGBT) technology, it provides the ability to operate under high voltage and high frequency conditions and is suitable for various power electronic applications.

2. High voltage tolerance: With a rated voltage of up to 60V, it is suitable for power supply and power control systems requiring high voltage stability.

3. High-frequency operation: Designed for high-frequency operation, suitable for applications that require fast switching and high-efficiency capabilities, such as variable frequency drives, inductive heating, and induction heating.

4. Low conduction and switching losses: The optimized design ensures low conduction and switching losses, improves energy efficiency and reduces the heat dissipation requirements of the system.

5. Reliability and stability: Strict quality control and testing ensure that FGH60N60SMD has excellent reliability and stability under various working conditions.

6. Compact packaging: The use of compact module packaging helps to facilitate integration into the circuit board, reduce system size, and improve design flexibility.

7. Wide application fields: Suitable for various fields, including industrial automation, electric vehicles, renewable energy, power supply systems, etc., to meet the power control needs of different applications.

 

The Infineon and Semikron IGBT module FGH60N60SMD is a reliable, high-performance power semiconductor device that combines the technical strengths of two leading manufacturers to provide an excellent solution for high voltage, high frequency applications. Its advantages in reliability, energy efficiency and applicability make it an ideal choice in a variety of power electronic designs.

 

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