60N60 Original New 600V 120A 378W TO247 IGBT Transistor

60N60 Original New 600V 120A 378W TO247 IGBT Transistor

TO-247 package: Using TO-247 package, it provides excellent heat dissipation performance, helps to reduce the temperature and ensures that the device can maintain stable performance when operating at high power.

  • Product Introduction
Product Description

 

Classification

Discrete semiconductor products

transistor

IGBT

Single IGBT

Manufacturer

onsemi

Package

Pipe fittings

IGBT type

field cutoff

Voltage - collector-emitter breakdown (maximum)

600 V

Current - Collector (Ic) (maximum)

120 A

Current - Collector Pulse (Icm)

180 A

Vce(on) (maximum value) when Vge and Ic are different

2.9V @ 15V, 60A

Power - Max

378W

Switching energy

1.79mJ (on), 670µJ (off)

Input type

standard

Gate charge

189nC

Td (on/off) value at 25°C

22ns/134ns

Test Conditions

400V, 60A, 5Ω, 15V

Reverse recovery time (trr)

47ns

Operating temperature

-55°C ~ 150°C(TJ)

Installation type

Through hole

Package/casing

TO-247-3

Supplier device packaging

TO-247-3

Basic product number

FGH60

 

Main Features

 

1.TO-247 package: Using TO-247 package, it provides excellent heat dissipation performance, helps to reduce the temperature and ensures that the device can maintain stable performance when operating at high power.

2.Original new type: This IGBT transistor is original new type, using the latest technology and design to ensure excellent, stable and reliable performance.

3.600V rated voltage: With a rated voltage of 600V, it is suitable for applications requiring high voltage tolerance, such as power systems and inverters.

4.120A current rating: With a current rating of 120A, it is capable of handling medium to high power currents and is suitable for various power electronic applications such as motor drives, inverters, etc.

5.378W power: With 378W power, it provides the device with powerful power processing capabilities and is suitable for application scenarios with high power requirements.

 

FAQ

 

Q: 1.What is IGBT?

A: IGBT stands for insulated-gate bipolar transistor. It is a bipolar transistor with an insulated gate terminal. The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications.

 

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