- Product Introduction
Product Attributes
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Goford Semiconductor |
|
Series |
TrenchFET® |
|
Part Status |
Active |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
30 V |
|
Current - Continuous Drain (Id) @ 25°C |
16A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
12mOhm @ 10A, 10V |
|
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
35 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
2800 pF @ 15 V |
|
Power Dissipation (Max) |
3W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
8-SOP |
|
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
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Accepted Payment Currency:USD,HKD,CNY;
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Language Spoken:English,Chinese
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