- Product Introduction
Product Attributes
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Integrated Circuits (ICs) Power Management (PMIC) Gate Drivers |
|
Manufacturer |
Microchip Technology |
|
Series |
- |
|
Part Status |
Active |
|
Driven Configuration |
Low-Side |
|
Channel Type |
Single |
|
Number of Drivers |
1 |
|
Gate Type |
IGBT, N-Channel, P-Channel MOSFET |
|
Voltage - Supply |
4.5V ~ 18V |
|
Logic Voltage - VIL, VIH |
0.8V, 2.4V |
|
Current - Peak Output (Source, Sink) |
10A, 10A |
|
Input Type |
Non-Inverting |
|
Rise / Fall Time (Typ) |
38ns, 33ns |
|
Operating Temperature |
-40°C ~ 150°C (TJ) |
|
Mounting Type |
Through Hole |
|
Package / Case |
8-DIP (0.300", 7.62mm) |
|
Supplier Device Package |
8-PDIP |
|
Base Product Number |
TC4422 |
General description
The TC4421A/TC4422A are improved versions of theearlier TC4421/TC4422 family of single-outputMOSFET drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). TheTC4421A/TC4422A have matched output rise and falltimes, as well as matched leading and falling-edgepropagation delay times. The TC4421A/TC4422Adevices also have very low cross-conduction current,reducing the overall power dissipation of the device.
These devices are essentially immune to any form ofupset, except direct overvoltage or over-dissipation.They cannot be latched under any conditions withintheir power and voltage ratings. These parts are notsubject to damage or improper operation when up to5V of ground bounce is present on their groundterminals. They can accept, without damage or logicupset, more than 1A inductive current of either polaritybeing forced back into their outputs. In addition, allterminals are fully protected against up to 4 kV ofelectrostatic discharge.
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