- Product Introduction
Product Attributes
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Integrated Circuits (ICs) Memory Memory |
|
Mfr |
Infineon Technologies |
|
Series |
F-RAM™ |
|
Part Status |
Active |
|
Memory Type |
Non-Volatile |
|
Memory Format |
FRAM |
|
Technology |
FRAM (Ferroelectric RAM) |
|
Memory Size |
16Kbit |
|
Memory Organization |
2K x 8 |
|
Memory Interface |
SPI |
|
Clock Frequency |
20 MHz |
|
Write Cycle Time - Word, Page |
- |
|
Voltage - Supply |
2.7V ~ 3.6V |
|
Operating Temperature |
-40°C ~ 85°C (TA) |
|
Mounting Type |
Surface Mount |
|
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
|
Supplier Device Package |
8-SOIC |
|
Base Product Number |
FM25L16 |
General description
The FM25L16B is a 16-Kbit nonvolatile memory employing anadvanced ferroelectric process. A ferroelectric random accessmemory or F-RAM is nonvolatile and performs reads and writessimilar to a RAM. It provides reliable data retention for 151 yearswhile eliminating the complexities, overhead, and system levelreliability problems caused by serial flash, EEPROM, and othernonvolatile memories.Unlike serial flash and EEPROM, the FM25L16B performs writeoperations at bus speed. No write delays are incurred. Data iswritten to the memory array immediately after each byte issuccessfully transferred to the device. The next bus cycle cancommence without the need for data polling. In addition, theproduct offers substantial write endurance compared with othernonvolatile memories. The FM25L16B is capable of supporting1014 read/write cycles, or 100 million times more write cyclesthan EEPROM.
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